Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

Gil Soo Park, Ji Hyuk Yu, Sang Won Seo, Woo Beom Choi, Kyeong Kap Paek, Man Young Sung, Heung Woo Park, Sang Kyeong Yun, Byeong Kwon Ju

Research output: Contribution to journalArticle

Abstract

Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.

Original languageEnglish
Pages (from-to)617-620
Number of pages4
JournalKey Engineering Materials
Volume326-328 I
Publication statusPublished - 2006 Dec 6

Keywords

  • Gold-gold bonding
  • RF-MEMS packaging
  • Thermocompression bonding
  • Wafer level packaging

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemical Engineering (miscellaneous)

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  • Cite this

    Park, G. S., Yu, J. H., Seo, S. W., Choi, W. B., Paek, K. K., Sung, M. Y., Park, H. W., Yun, S. K., & Ju, B. K. (2006). Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers. Key Engineering Materials, 326-328 I, 617-620.