Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well fabry-pérot laser diode

Jae Ho Han, Sung Woong Park

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

This paper investigated the reliability of semiconductor 1.3-μm multiquantum-well (MQW) Fabry-Pérot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85°C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2 × 106 h operating at room temperature.

Original languageEnglish
Pages (from-to)683-687
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume5
Issue number4
DOIs
Publication statusPublished - 2005 Dec
Externally publishedYes

Keywords

  • Laser reliability
  • Materials reliability
  • Optoelectronic devices
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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