Wafer-scale growth of ITO nanorods by radio frequency magnetron sputtering deposition

Jae Hyoung Park, Hoo Keun Park, Jinhoo Jeong, Woong Kim, Byoung Koun Min, Young Rag Do

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We demonstrate synthesis of tin-doped indium oxide (ITO) nanorods on 2-in. glass wafers via radio frequency (rf)-magnetron sputtering deposition. The nanorods possessed a single-crystal structure of bixbyite, grew along the >100< orientation of the cubic unit cell, and were vertically aligned to the substrates. Height and diameter of the nanorods were as large as ∼810 nm and 40-100 nm, respectively. The morphological, structural, compositional, optical, and electrical properties of the ITO nanorods were examined with respect to growth temperature (25-500°C) and growth time (10-60 min). ITO nanorod films synthesized at 500°C exhibited excellent electrical and optical property such as a low sheet resistance (∼41ω) and high transparency in the wavelength range of visible light (i.e., ∼87 transmission at 550 nm). The facile approach to synthesize ITO nanorods at a large scale demonstrated in this work may find various applications including the fabrication of high performance optoelectronic devices.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number5
DOIs
Publication statusPublished - 2011 Apr 4

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

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