Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

Ji Hyun Kim, Janghyuk Kim, Geonyeop Lee

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO<inf>2</inf>/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 10<sup>15</sup>cm<sup>-2</sup> onto the surface of the Ni/SiO<inf>2</inf>/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600-900 °C) to form a sp<sup>2</sup>-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics.

Original languageEnglish
Article number033104
JournalApplied Physics Letters
Volume107
Issue number3
DOIs
Publication statusPublished - 2015 Jul 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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