Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment

W. B. Choi, C. M. Ju, B. K. Ju, M. Y. Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A method of direct wafer bonding using surfaces activated by a radiofrequency hydrogen plasma for the silicon on insulator (SOI) applications is described. The hydrogen plasma cleaning of silicon in the reactive ion etching mode is investigated as a pretreatment for silicon direct bonding. The scheme can reduce the concentration of carbon impurity at the surface below 5 at.% level. The surface becomes smoother with decreasing plasma exposure time and power.

Original languageEnglish
Title of host publicationProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
PublisherIEEE
Number of pages1
ISBN (Print)0780355032
Publication statusPublished - 1999
EventProceedings of the 1999 24th IEEE/CPMT International Electronics Manufacturing Technology Symposium (IEMT 1999) - Austin, TX, USA
Duration: 1999 Oct 181999 Oct 19

Publication series

NameProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
ISSN (Print)1089-8190

Other

OtherProceedings of the 1999 24th IEEE/CPMT International Electronics Manufacturing Technology Symposium (IEMT 1999)
CityAustin, TX, USA
Period99/10/1899/10/19

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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