Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment

W. B. Choi, C. M. Ju, Byeong Kwon Ju, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A method of direct wafer bonding using surfaces activated by a radiofrequency hydrogen plasma for the silicon on insulator (SOI) applications is described. The hydrogen plasma cleaning of silicon in the reactive ion etching mode is investigated as a pretreatment for silicon direct bonding. The scheme can reduce the concentration of carbon impurity at the surface below 5 at.% level. The surface becomes smoother with decreasing plasma exposure time and power.

Original languageEnglish
Title of host publicationProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
ISBN (Print)0780355032
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 24th IEEE/CPMT International Electronics Manufacturing Technology Symposium (IEMT 1999) - Austin, TX, USA
Duration: 1999 Oct 181999 Oct 19

Other

OtherProceedings of the 1999 24th IEEE/CPMT International Electronics Manufacturing Technology Symposium (IEMT 1999)
CityAustin, TX, USA
Period99/10/1899/10/19

Fingerprint

Plasmas
Silicon
Hydrogen
Wafer bonding
Reactive ion etching
Cleaning
Impurities
Carbon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Choi, W. B., Ju, C. M., Ju, B. K., & Sung, M. Y. (1999). Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment. In Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium Piscataway, NJ, United States: IEEE.

Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment. / Choi, W. B.; Ju, C. M.; Ju, Byeong Kwon; Sung, Man Young.

Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium. Piscataway, NJ, United States : IEEE, 1999.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Choi, WB, Ju, CM, Ju, BK & Sung, MY 1999, Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment. in Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium. IEEE, Piscataway, NJ, United States, Proceedings of the 1999 24th IEEE/CPMT International Electronics Manufacturing Technology Symposium (IEMT 1999), Austin, TX, USA, 99/10/18.
Choi WB, Ju CM, Ju BK, Sung MY. Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment. In Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium. Piscataway, NJ, United States: IEEE. 1999
Choi, W. B. ; Ju, C. M. ; Ju, Byeong Kwon ; Sung, Man Young. / Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment. Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium. Piscataway, NJ, United States : IEEE, 1999.
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