Wavelength dependence of the indices of refraction of molecular beam epitaxy-grown ZnMgSe and ZnCdSe thin films measured by two complementary techniques

F. C. Peiris, Sang Hoon Lee, U. Bindley, J. K. Furdyna

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We have measured the wavelength dependence of the indices of refraction n of epitaxial Zn1-xMgxSe and Zn1-xCdxSe films for a series of alloy compositions x, at wavelengths below the energy gaps of these semiconductor alloys. The measurements were performed using a combination of the prism coupler method and reflectivity. The prism coupler technique was capable of measuring n with an accuracy of at least 0.1% at four discrete wavelengths, and simultaneously to determine the thickness of the layers with an uncertainty of less than 0.5%. Using these discrete, highly precise values of n, the Fabry-Perot oscillations of the reflectivity spectra were then analyzed to obtain the continuous variation of the indices of refraction as a function of wavelength in the transparency region of the alloys.

Original languageEnglish
Pages (from-to)918-922
Number of pages5
JournalJournal of Applied Physics
Volume86
Issue number2
Publication statusPublished - 1999 Jul 15
Externally publishedYes

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refraction
molecular beam epitaxy
thin films
wavelengths
couplers
prisms
reflectance
oscillations

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Wavelength dependence of the indices of refraction of molecular beam epitaxy-grown ZnMgSe and ZnCdSe thin films measured by two complementary techniques. / Peiris, F. C.; Lee, Sang Hoon; Bindley, U.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 86, No. 2, 15.07.1999, p. 918-922.

Research output: Contribution to journalArticle

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