Wavelength detuning of DFB laser incorporating compressively strained MQW and automatically buried absorptive grating

Jae Ho Han; Sung Woong Park

doi:10.1016/j.ijleo.2011.11.038

Wavelength detuning of DFB laser incorporating compressively strained MQW and automatically buried absorptive grating

Jae Ho Han, Sung Woong Park

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The thermal effect on wavelength detuning of the uncooled packaged complex (loss)-coupled distributed feedback (DFB) edge emitting 1.55-μm laser has been investigated for wide temperature range of -40 °C to 85 °C. The InGaAsP/InP laser diode incorporates a thin 1% compressively strained multiple quantum well (MQW) structure as well as an automatically buried InAsP buried layer in the grating region to simplify the steps of the epitaxial growth during the fabrication processes. As an experimental result, it has been found that the wavelength detuning between the gain medium (Fabry-Perot cavity) and the Bragg grating (for distributed feedback) should be optimized around -10 nm at the room temperature to accommodate their differently shifting center wavelengths for temperature changes where the gain profile changes faster than DFB wavelength for predicting a single mode operation in a wide temperature range. Based on the measured optical characteristics (threshold current, slope efficiency) of the fabricated diode laser, the characteristic temperature was estimated to be approximately 46 K and the slope efficiency ratio between room and high temperatures was around 70%.

Original language	English
Pages (from-to)	64-66
Number of pages	3
Journal	Optik
Volume	124
Issue number	1
DOIs	https://doi.org/10.1016/j.ijleo.2011.11.038
Publication status	Published - 2013 Jan

Keywords

DFB laser
Optical characteristics
Thermal effect
Wavelength detuning

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.ijleo.2011.11.038

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title = "Wavelength detuning of DFB laser incorporating compressively strained MQW and automatically buried absorptive grating",

abstract = "The thermal effect on wavelength detuning of the uncooled packaged complex (loss)-coupled distributed feedback (DFB) edge emitting 1.55-μm laser has been investigated for wide temperature range of -40 °C to 85 °C. The InGaAsP/InP laser diode incorporates a thin 1% compressively strained multiple quantum well (MQW) structure as well as an automatically buried InAsP buried layer in the grating region to simplify the steps of the epitaxial growth during the fabrication processes. As an experimental result, it has been found that the wavelength detuning between the gain medium (Fabry-Perot cavity) and the Bragg grating (for distributed feedback) should be optimized around -10 nm at the room temperature to accommodate their differently shifting center wavelengths for temperature changes where the gain profile changes faster than DFB wavelength for predicting a single mode operation in a wide temperature range. Based on the measured optical characteristics (threshold current, slope efficiency) of the fabricated diode laser, the characteristic temperature was estimated to be approximately 46 K and the slope efficiency ratio between room and high temperatures was around 70%.",

keywords = "DFB laser, Optical characteristics, Thermal effect, Wavelength detuning",

author = "Han, {Jae Ho} and Park, {Sung Woong}",

note = "Funding Information: This research was supported by World Class University program funded by the Ministry of Education, Science and Technology through the National Research Foundation of Korea ( R31-10008 ). This research was also supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0010823).",

year = "2013",

month = jan,

doi = "10.1016/j.ijleo.2011.11.038",

language = "English",

volume = "124",

pages = "64--66",

journal = "Optik",

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publisher = "Urban und Fischer Verlag Jena",

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T1 - Wavelength detuning of DFB laser incorporating compressively strained MQW and automatically buried absorptive grating

AU - Han, Jae Ho

AU - Park, Sung Woong

N1 - Funding Information: This research was supported by World Class University program funded by the Ministry of Education, Science and Technology through the National Research Foundation of Korea ( R31-10008 ). This research was also supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2011-0010823).

PY - 2013/1

Y1 - 2013/1

N2 - The thermal effect on wavelength detuning of the uncooled packaged complex (loss)-coupled distributed feedback (DFB) edge emitting 1.55-μm laser has been investigated for wide temperature range of -40 °C to 85 °C. The InGaAsP/InP laser diode incorporates a thin 1% compressively strained multiple quantum well (MQW) structure as well as an automatically buried InAsP buried layer in the grating region to simplify the steps of the epitaxial growth during the fabrication processes. As an experimental result, it has been found that the wavelength detuning between the gain medium (Fabry-Perot cavity) and the Bragg grating (for distributed feedback) should be optimized around -10 nm at the room temperature to accommodate their differently shifting center wavelengths for temperature changes where the gain profile changes faster than DFB wavelength for predicting a single mode operation in a wide temperature range. Based on the measured optical characteristics (threshold current, slope efficiency) of the fabricated diode laser, the characteristic temperature was estimated to be approximately 46 K and the slope efficiency ratio between room and high temperatures was around 70%.

AB - The thermal effect on wavelength detuning of the uncooled packaged complex (loss)-coupled distributed feedback (DFB) edge emitting 1.55-μm laser has been investigated for wide temperature range of -40 °C to 85 °C. The InGaAsP/InP laser diode incorporates a thin 1% compressively strained multiple quantum well (MQW) structure as well as an automatically buried InAsP buried layer in the grating region to simplify the steps of the epitaxial growth during the fabrication processes. As an experimental result, it has been found that the wavelength detuning between the gain medium (Fabry-Perot cavity) and the Bragg grating (for distributed feedback) should be optimized around -10 nm at the room temperature to accommodate their differently shifting center wavelengths for temperature changes where the gain profile changes faster than DFB wavelength for predicting a single mode operation in a wide temperature range. Based on the measured optical characteristics (threshold current, slope efficiency) of the fabricated diode laser, the characteristic temperature was estimated to be approximately 46 K and the slope efficiency ratio between room and high temperatures was around 70%.

KW - DFB laser

KW - Optical characteristics

KW - Thermal effect

KW - Wavelength detuning

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Wavelength detuning of DFB laser incorporating compressively strained MQW and automatically buried absorptive grating

Abstract

Keywords

ASJC Scopus subject areas

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