A discrete wavelet transformation (DWT) was used for characterizing plasma etching profiles. The DWT was applied to photos taken with a scanning electron microscope (SEM), and the sensitivity of the method was evaluated using various process parameters, including radio frequency source power and SF6 flow rate. The wavelet coefficients were found to be extremely sensitive to plasma faults. The method also proved to be an effective means for monitoring plasma states in device manufacturing sites.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Nov 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)