Wavelet monitoring of plasma etching

Byungwhan Kim, Won Sun Choi, Myo Taeg Lim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A discrete wavelet transformation (DWT) was used for characterizing plasma etching profiles. The DWT was applied to photos taken with a scanning electron microscope (SEM), and the sensitivity of the method was evaluated using various process parameters, including radio frequency source power and SF6 flow rate. The wavelet coefficients were found to be extremely sensitive to plasma faults. The method also proved to be an effective means for monitoring plasma states in device manufacturing sites.

Original languageEnglish
Pages (from-to)2329-2333
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - 2003 Nov 1

Fingerprint

Plasma etching
plasma etching
Plasmas
Monitoring
radio frequencies
Electron microscopes
manufacturing
flow velocity
electron microscopes
Flow rate
Scanning
scanning
sensitivity
coefficients
profiles

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Wavelet monitoring of plasma etching. / Kim, Byungwhan; Choi, Won Sun; Lim, Myo Taeg.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 01.11.2003, p. 2329-2333.

Research output: Contribution to journalArticle

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