Weak and strong localization in low-dimensional semiconductor structures

Sung Ryul Yang, J. Rammer

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The dependence of the localization length on the number of occupied subbands N in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires, while it grows exponentially with N in quasi-two-dimensional systems. Also, a weak localization theory is developed for large N with a well-defined small expansion parameter 1/N. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.

Original languageEnglish
Pages (from-to)9568-9571
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number15
Publication statusPublished - 1996 Apr 15
Externally publishedYes

Fingerprint

Semiconductor quantum wires
Semiconductor materials
quantum wires
Temperature
perturbation theory
conductivity
temperature dependence
expansion

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Weak and strong localization in low-dimensional semiconductor structures. / Yang, Sung Ryul; Rammer, J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 15, 15.04.1996, p. 9568-9571.

Research output: Contribution to journalArticle

@article{308589862a1e406bb7d1517faacda98d,
title = "Weak and strong localization in low-dimensional semiconductor structures",
abstract = "The dependence of the localization length on the number of occupied subbands N in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires, while it grows exponentially with N in quasi-two-dimensional systems. Also, a weak localization theory is developed for large N with a well-defined small expansion parameter 1/N. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.",
author = "Yang, {Sung Ryul} and J. Rammer",
year = "1996",
month = "4",
day = "15",
language = "English",
volume = "53",
pages = "9568--9571",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Weak and strong localization in low-dimensional semiconductor structures

AU - Yang, Sung Ryul

AU - Rammer, J.

PY - 1996/4/15

Y1 - 1996/4/15

N2 - The dependence of the localization length on the number of occupied subbands N in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires, while it grows exponentially with N in quasi-two-dimensional systems. Also, a weak localization theory is developed for large N with a well-defined small expansion parameter 1/N. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.

AB - The dependence of the localization length on the number of occupied subbands N in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires, while it grows exponentially with N in quasi-two-dimensional systems. Also, a weak localization theory is developed for large N with a well-defined small expansion parameter 1/N. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.

UR - http://www.scopus.com/inward/record.url?scp=2842567119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2842567119&partnerID=8YFLogxK

M3 - Article

VL - 53

SP - 9568

EP - 9571

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 15

ER -