Weak and strong localization in low-dimensional semiconductor structures

S. R.Eric Yang, J. Rammer

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The dependence of the localization length on the number of occupied subbands N in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in quasi-one-dimensional quantum wires, while it grows exponentially with N in quasi-two-dimensional systems. Also, a weak localization theory is developed for large N with a well-defined small expansion parameter 1/N. The temperature dependence of the conductivity deduced using this perturbation theory agrees with the experimentally observed dependence.

Original languageEnglish
Pages (from-to)9568-9571
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number15
DOIs
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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