Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

Z. H. Wang, G. Du, Jinsoo Joo, A. Burns, S. Jasty, P. Zhou, A. J. Epstein, J. A. Osaheni, S. A. Jenekhe, C. S. Wang

Research output: Contribution to journalArticle

Abstract

Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to ∼ 102 S/cm after implantation. A metal-insulator transition is observed at Tc ∼ 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T) α Tp, 0.5 < p < 1), a linearly T-dependent thermopower (S(T)), a Pauli spin susceptibility (χPauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a 'Coulomb' gap (∼2meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the 'Coulomb' gap.

Original languageEnglish
Pages (from-to)4829-4835
Number of pages7
JournalSynthetic Metals
Volume57
Issue number2-3
Publication statusPublished - 1993 Apr 19
Externally publishedYes

Fingerprint

Electron-electron interactions
Metal insulator transition
Polymers
electron scattering
insulators
Ions
Thermoelectric power
Ladders
polymers
Magnetoresistance
metals
Charge transfer
conductivity
ions
electrons
Permittivity
Metals
Microwaves
ladders
Temperature

ASJC Scopus subject areas

  • Polymers and Plastics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials

Cite this

Wang, Z. H., Du, G., Joo, J., Burns, A., Jasty, S., Zhou, P., ... Wang, C. S. (1993). Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. Synthetic Metals, 57(2-3), 4829-4835.

Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. / Wang, Z. H.; Du, G.; Joo, Jinsoo; Burns, A.; Jasty, S.; Zhou, P.; Epstein, A. J.; Osaheni, J. A.; Jenekhe, S. A.; Wang, C. S.

In: Synthetic Metals, Vol. 57, No. 2-3, 19.04.1993, p. 4829-4835.

Research output: Contribution to journalArticle

Wang, ZH, Du, G, Joo, J, Burns, A, Jasty, S, Zhou, P, Epstein, AJ, Osaheni, JA, Jenekhe, SA & Wang, CS 1993, 'Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers', Synthetic Metals, vol. 57, no. 2-3, pp. 4829-4835.
Wang, Z. H. ; Du, G. ; Joo, Jinsoo ; Burns, A. ; Jasty, S. ; Zhou, P. ; Epstein, A. J. ; Osaheni, J. A. ; Jenekhe, S. A. ; Wang, C. S. / Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. In: Synthetic Metals. 1993 ; Vol. 57, No. 2-3. pp. 4829-4835.
@article{d332a67b6bd94d87b3032d5ea372a15a,
title = "Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers",
abstract = "Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to ∼ 102 S/cm after implantation. A metal-insulator transition is observed at Tc ∼ 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T) α Tp, 0.5 < p < 1), a linearly T-dependent thermopower (S(T)), a Pauli spin susceptibility (χPauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a 'Coulomb' gap (∼2meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the 'Coulomb' gap.",
author = "Wang, {Z. H.} and G. Du and Jinsoo Joo and A. Burns and S. Jasty and P. Zhou and Epstein, {A. J.} and Osaheni, {J. A.} and Jenekhe, {S. A.} and Wang, {C. S.}",
year = "1993",
month = "4",
day = "19",
language = "English",
volume = "57",
pages = "4829--4835",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "2-3",

}

TY - JOUR

T1 - Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

AU - Wang, Z. H.

AU - Du, G.

AU - Joo, Jinsoo

AU - Burns, A.

AU - Jasty, S.

AU - Zhou, P.

AU - Epstein, A. J.

AU - Osaheni, J. A.

AU - Jenekhe, S. A.

AU - Wang, C. S.

PY - 1993/4/19

Y1 - 1993/4/19

N2 - Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to ∼ 102 S/cm after implantation. A metal-insulator transition is observed at Tc ∼ 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T) α Tp, 0.5 < p < 1), a linearly T-dependent thermopower (S(T)), a Pauli spin susceptibility (χPauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a 'Coulomb' gap (∼2meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the 'Coulomb' gap.

AB - Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to ∼ 102 S/cm after implantation. A metal-insulator transition is observed at Tc ∼ 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T) α Tp, 0.5 < p < 1), a linearly T-dependent thermopower (S(T)), a Pauli spin susceptibility (χPauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a 'Coulomb' gap (∼2meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the 'Coulomb' gap.

UR - http://www.scopus.com/inward/record.url?scp=43949167041&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43949167041&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:43949167041

VL - 57

SP - 4829

EP - 4835

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 2-3

ER -