Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

Z. H. Wang, G. Du, J. Joo, A. Burns, S. Jasty, P. Zhou, A. J. Epstein, J. A. Osaheni, S. A. Jenekhe, C. S. Wang

Research output: Contribution to journalArticle

Abstract

Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to ∼ 102 S/cm after implantation. A metal-insulator transition is observed at Tc ∼ 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T) α Tp, 0.5 < p < 1), a linearly T-dependent thermopower (S(T)), a Pauli spin susceptibility (χPauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a 'Coulomb' gap (∼2meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the 'Coulomb' gap.

Original languageEnglish
Pages (from-to)4829-4835
Number of pages7
JournalSynthetic Metals
Volume57
Issue number2-3
DOIs
Publication statusPublished - 1993 Apr 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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    Wang, Z. H., Du, G., Joo, J., Burns, A., Jasty, S., Zhou, P., Epstein, A. J., Osaheni, J. A., Jenekhe, S. A., & Wang, C. S. (1993). Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. Synthetic Metals, 57(2-3), 4829-4835. https://doi.org/10.1016/0379-6779(93)90824-G