Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

Z. H. Wang; G. Du; J. Joo; A. Burns; S. Jasty; P. Zhou; A. J. Epstein; J. A. Osaheni; S. A. Jenekhe; C. S. Wang

Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

Z. H. Wang, G. Du, J. Joo, A. Burns, S. Jasty, P. Zhou, A. J. Epstein, J. A. Osaheni, S. A. Jenekhe, C. S. Wang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Kr⁺ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10^-12 S/cm to approximately 10² S/cm after implantation. A metal-insulator transition is observed at T_c to approximately 30 K. Above T_c, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝T^p, 0.5<p<1), a linearly T-dependent thermopower (S(T)), a Pauli spin susceptibility (χ^Pauli), and a large microwave dielectric constant (ε_mw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below T_c, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive ε_mw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.

Original language	English
Pages (from-to)	4829-4835
Number of pages	7
Journal	Synthetic Metals
Volume	57
Issue number	2 -3 pt 6
Publication status	Published - 1993 Jan 1
Externally published	Yes
Event	Proceedings of the International Conferece on Science and Technology of Synthetic Metals - Goteborg, Swed Duration: 1992 Aug 12 → 1992 Aug 18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Cite this

@article{2a0a027fe3924275b4db5b6060f37cda,

title = "Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers",

abstract = "Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to approximately 102 S/cm after implantation. A metal-insulator transition is observed at Tc to approximately 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝Tp, 0.5Pauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.",

author = "Wang, {Z. H.} and G. Du and J. Joo and A. Burns and S. Jasty and P. Zhou and Epstein, {A. J.} and Osaheni, {J. A.} and Jenekhe, {S. A.} and Wang, {C. S.}",

note = "Funding Information: ACKNOWLEDGEMENTS The authors thank S. L. Zhao for assistance, and S. Tibbets for implantation. This work was supported in part by US Air Force OSR Contract No. F49820-92-C0002.; Proceedings of the International Conferece on Science and Technology of Synthetic Metals ; Conference date: 12-08-1992 Through 18-08-1992",

year = "1993",

month = jan,

day = "1",

language = "English",

volume = "57",

pages = "4829--4835",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "2 -3 pt 6",

}

TY - JOUR

T1 - Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

AU - Wang, Z. H.

AU - Du, G.

AU - Joo, J.

AU - Burns, A.

AU - Jasty, S.

AU - Zhou, P.

AU - Epstein, A. J.

AU - Osaheni, J. A.

AU - Jenekhe, S. A.

AU - Wang, C. S.

N1 - Funding Information: ACKNOWLEDGEMENTS The authors thank S. L. Zhao for assistance, and S. Tibbets for implantation. This work was supported in part by US Air Force OSR Contract No. F49820-92-C0002.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to approximately 102 S/cm after implantation. A metal-insulator transition is observed at Tc to approximately 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝Tp, 0.5Pauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.

AB - Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to approximately 102 S/cm after implantation. A metal-insulator transition is observed at Tc to approximately 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝Tp, 0.5Pauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.

UR - http://www.scopus.com/inward/record.url?scp=0027579785&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0027579785

SN - 0379-6779

VL - 57

SP - 4829

EP - 4835

JO - Synthetic Metals

JF - Synthetic Metals

IS - 2 -3 pt 6

T2 - Proceedings of the International Conferece on Science and Technology of Synthetic Metals

Y2 - 12 August 1992 through 18 August 1992

ER -

Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

Abstract

ASJC Scopus subject areas

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