Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

Z. H. Wang, G. Du, Jinsoo Joo, A. Burns, S. Jasty, P. Zhou, A. J. Epstein, J. A. Osaheni, S. A. Jenekhe, C. S. Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to approximately 102 S/cm after implantation. A metal-insulator transition is observed at Tc to approximately 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝Tp, 0.5<p<1), a linearly T-dependent thermopower (S(T)), a Pauli spin susceptibility (χPauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.

Original languageEnglish
Pages (from-to)4829-4835
Number of pages7
JournalSynthetic Metals
Volume57
Issue number2 -3 pt 6
Publication statusPublished - 1993 Apr 1
Externally publishedYes

Fingerprint

Electron-electron interactions
Metal insulator transition
Polymers
electron scattering
insulators
Ions
Thermoelectric power
Ladders
polymers
Magnetoresistance
metals
Charge transfer
conductivity
ions
electrons
Permittivity
Metals
Microwaves
ladders
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

Cite this

Wang, Z. H., Du, G., Joo, J., Burns, A., Jasty, S., Zhou, P., ... Wang, C. S. (1993). Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. Synthetic Metals, 57(2 -3 pt 6), 4829-4835.

Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. / Wang, Z. H.; Du, G.; Joo, Jinsoo; Burns, A.; Jasty, S.; Zhou, P.; Epstein, A. J.; Osaheni, J. A.; Jenekhe, S. A.; Wang, C. S.

In: Synthetic Metals, Vol. 57, No. 2 -3 pt 6, 01.04.1993, p. 4829-4835.

Research output: Contribution to journalArticle

Wang, ZH, Du, G, Joo, J, Burns, A, Jasty, S, Zhou, P, Epstein, AJ, Osaheni, JA, Jenekhe, SA & Wang, CS 1993, 'Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers', Synthetic Metals, vol. 57, no. 2 -3 pt 6, pp. 4829-4835.
Wang ZH, Du G, Joo J, Burns A, Jasty S, Zhou P et al. Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. Synthetic Metals. 1993 Apr 1;57(2 -3 pt 6):4829-4835.
Wang, Z. H. ; Du, G. ; Joo, Jinsoo ; Burns, A. ; Jasty, S. ; Zhou, P. ; Epstein, A. J. ; Osaheni, J. A. ; Jenekhe, S. A. ; Wang, C. S. / Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers. In: Synthetic Metals. 1993 ; Vol. 57, No. 2 -3 pt 6. pp. 4829-4835.
@article{2a0a027fe3924275b4db5b6060f37cda,
title = "Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers",
abstract = "Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to approximately 102 S/cm after implantation. A metal-insulator transition is observed at Tc to approximately 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝Tp, 0.5Pauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.",
author = "Wang, {Z. H.} and G. Du and Jinsoo Joo and A. Burns and S. Jasty and P. Zhou and Epstein, {A. J.} and Osaheni, {J. A.} and Jenekhe, {S. A.} and Wang, {C. S.}",
year = "1993",
month = "4",
day = "1",
language = "English",
volume = "57",
pages = "4829--4835",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "2 -3 pt 6",

}

TY - JOUR

T1 - Weak localization, electron-electron interaction, and metal-insulator transition in ion-implanted polymers

AU - Wang, Z. H.

AU - Du, G.

AU - Joo, Jinsoo

AU - Burns, A.

AU - Jasty, S.

AU - Zhou, P.

AU - Epstein, A. J.

AU - Osaheni, J. A.

AU - Jenekhe, S. A.

AU - Wang, C. S.

PY - 1993/4/1

Y1 - 1993/4/1

N2 - Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to approximately 102 S/cm after implantation. A metal-insulator transition is observed at Tc to approximately 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝Tp, 0.5Pauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.

AB - Kr+ ion implanted rigid rod PBO, PBT and ladder BBL polymers show similar transport and optical behavior, with room temperature conductivities increasing from 10-12 S/cm to approximately 102 S/cm after implantation. A metal-insulator transition is observed at Tc to approximately 30 K. Above Tc, the results of a negative magnetoresistance (ΔR/R(H,T)), a weakly temperature dependent conductivity (σ(T)∝Tp, 0.5Pauli), and a large microwave dielectric constant (εmw) resemble those of disordered metals in which weak localization and e-e interactions dominate the charge transport. Below Tc, the changed behavior of positive ΔR/R, stronger T-dependent σ, and 1/T-dependent S with a continued large and positive εmw all suggest an increased e-e interaction effect which opens up a `Coulomb' gap (approximately 2 meV), likely due to the enhanced localization. The density of states (DOS) is zero only at the center of the gap in accord with the theoretical prediction of the `Coulomb' gap.

UR - http://www.scopus.com/inward/record.url?scp=0027579785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027579785&partnerID=8YFLogxK

M3 - Article

VL - 57

SP - 4829

EP - 4835

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 2 -3 pt 6

ER -