Well-aligned carbon nanotubes grown on a large-area Si substrate by thermal chemical-vapor deposition

Cheol Jin Lee, Jong Hun Han, Jae Eun Yoo, Seung Youl Kang, Jin H. Lee, Kyung I. Cho

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We have grown vertically aligned carbon nanotubes (CNTs) on large areas of Co-Ni codeposited Si substrates by using thermal chemical vapor deposition with C2H2 gas. The CNTs grown by thermal chemical vapor deposition are multiwalled structures, and the wall surfaces of the nanotubes are covered with a defective graphite sheet or carbonaceous particles. The CNTs range from 50 to 120 nm in diameter and about 130 μm in length at 950 °C. The grown CNTs have a bamboo structure. As the particle size of the Co-Ni catalyst decreases, the diameter of the CNTs decreases, and the vertical alignment is significantly enhanced. Steric hindrance between nanotubes forces them to align vertically during the initial stage of the growth. The turn-on voltage is about 0.8 V/μm with a current density of 0.1 μA/cm2, and the emission-current density is about 1.1 μA/cm2 at 4.5 V/μm. The emission current reveals a Fowler-Nordheim mode.

Original languageEnglish
Pages (from-to)858-861
Number of pages4
JournalJournal of the Korean Physical Society
Volume37
Issue number6
Publication statusPublished - 2000 Dec 1
Externally publishedYes

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carbon nanotubes
vapor deposition
nanotubes
current density
graphite
alignment
catalysts
electric potential
gases

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Well-aligned carbon nanotubes grown on a large-area Si substrate by thermal chemical-vapor deposition. / Lee, Cheol Jin; Han, Jong Hun; Yoo, Jae Eun; Kang, Seung Youl; Lee, Jin H.; Cho, Kyung I.

In: Journal of the Korean Physical Society, Vol. 37, No. 6, 01.12.2000, p. 858-861.

Research output: Contribution to journalArticle

Lee, Cheol Jin ; Han, Jong Hun ; Yoo, Jae Eun ; Kang, Seung Youl ; Lee, Jin H. ; Cho, Kyung I. / Well-aligned carbon nanotubes grown on a large-area Si substrate by thermal chemical-vapor deposition. In: Journal of the Korean Physical Society. 2000 ; Vol. 37, No. 6. pp. 858-861.
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