Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction

Hong Yeol Kim, Younghun Jung, Sung Hyun Kim, Jaehui Ahn, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jihyun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The surface of a non-polar a-plane GaN light-emitting diode (LED) was intentionally damaged with a KOH wet etch to enhance the extraction of light. This roughening technique has been commonly applied to c-plane polar GaN LEDs to extract photons that would otherwise suffer from total internal refraction. We show that wet etching of the non-polar LED does create a textured surface that increases the light extraction efficiency; however, the mechanism of the etch is quite dissimilar to the etch mechanism observed for c-plane LEDs. In fact, the etch proceeds perpendicular to the a-plane surface along unstable N-face (0 0 0 -1) plane with the Ga-face plane resistant to the etch. The photoluminescence intensity from a-plane non-polar LED after KOH-based wet etching was increased by 83% in our experiments. Therefore, surface roughening by KOH-based wet etch was found to be very effective to extract photons from a-plane non-polar GaN-based LEDs.

Original languageEnglish
Pages (from-to)65-68
Number of pages4
JournalJournal of Crystal Growth
Volume326
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

Keywords

  • B1. Gallium compounds
  • B3. Light-emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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