White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED

Wonkeun Chung, Hong Jeong Yu, Sung Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.

Original languageEnglish
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages962-965
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: 2010 Aug 172010 Aug 20

Other

Other2010 10th IEEE Conference on Nanotechnology, NANO 2010
CountryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period10/8/1710/8/20

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Chung, W., Yu, H. J., & Kim, S. H. (2010). White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010 (pp. 962-965). [5697999] https://doi.org/10.1109/NANO.2010.5697999