Abstract
White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.
| Original language | English |
|---|---|
| Title of host publication | 2010 10th IEEE Conference on Nanotechnology, NANO 2010 |
| Pages | 962-965 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
| Event | 2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of Duration: 2010 Aug 17 → 2010 Aug 20 |
Other
| Other | 2010 10th IEEE Conference on Nanotechnology, NANO 2010 |
|---|---|
| Country | Korea, Republic of |
| City | Ilsan, Gyeonggi-Do |
| Period | 10/8/17 → 10/8/20 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED. / Chung, Wonkeun; Yu, Hong Jeong; Kim, Sung Hyun.
2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. p. 962-965 5697999.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED
AU - Chung, Wonkeun
AU - Yu, Hong Jeong
AU - Kim, Sung Hyun
PY - 2010/12/1
Y1 - 2010/12/1
N2 - White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.
AB - White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.
UR - http://www.scopus.com/inward/record.url?scp=79951828690&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951828690&partnerID=8YFLogxK
U2 - 10.1109/NANO.2010.5697999
DO - 10.1109/NANO.2010.5697999
M3 - Conference contribution
SN - 9781424470334
SP - 962
EP - 965
BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
ER -