White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED

Wonkeun Chung; Hong Jeong Yu; Sung Hyun Kim

doi:10.1109/NANO.2010.5697999

White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED

Wonkeun Chung, Hong Jeong Yu, Sung Hyun Kim

Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.

Original language	English
Title of host publication	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages	962-965
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2010.5697999
Publication status	Published - 2010
Event	2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of Duration: 2010 Aug 17 → 2010 Aug 20

Publication series

Name	2010 10th IEEE Conference on Nanotechnology, NANO 2010

Other

Other	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Country	Korea, Republic of
City	Ilsan, Gyeonggi-Do
Period	10/8/17 → 10/8/20

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1109/NANO.2010.5697999

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Chung, W, Yu, HJ & Kim, SH 2010, White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED. in 2010 10th IEEE Conference on Nanotechnology, NANO 2010., 5697999, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp. 962-965, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, Korea, Republic of, 10/8/17. https://doi.org/10.1109/NANO.2010.5697999

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title = "White emission from CdSe/ZnSe nanoparticles combining with 400, 430 and 460nm InGaN LED",

abstract = "White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.",

author = "Wonkeun Chung and Yu, {Hong Jeong} and Kim, {Sung Hyun}",

year = "2010",

doi = "10.1109/NANO.2010.5697999",

language = "English",

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series = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",

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note = "2010 10th IEEE Conference on Nanotechnology, NANO 2010 ; Conference date: 17-08-2010 Through 20-08-2010",

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AU - Chung, Wonkeun

AU - Yu, Hong Jeong

AU - Kim, Sung Hyun

PY - 2010

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N2 - White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.

AB - White light emitting diodes (LEDs) were fabricated combining InGaN LED chip as the excitation source and CdSe/ZnSe as the phosphor. CdSe/ZnSe nanoparticles were synthesized via wet chemical method using CdO, zinc stearate, TOPSe as precursors. 4.5 and 5.3nm diameter CdSe/ZnSe nanoparticles with emission peak at 540 and 620nm, respectively, were obtained. CdSe nanoparticle phosphors were coated onto the 460, 430 and 400nm LED chips to fabricate white LEDs. As the shorter wavelength of LED chip was applied to excitation source, the luminous efficiency of white LED was enhanced. The luminous efficiencies of 400, 430, and 460nm excitation white LEDs were 2.15, 3.96 and 6.57 lm/W, respectively at 20 mA. The corresponding CIE-1931 coordinates were (0.34, 0.30), (0.30, 0.32), and (0.31, 0.29). The color rendering index (CRI) of white LED showed similar values ; 65.1, 65.5, and 66.2.

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