Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, L. A. Boatner

Research output: Contribution to journalReview article

893 Citations (Scopus)

Abstract

An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

Original languageEnglish
Pages (from-to)1-13
Number of pages13
JournalJournal of Applied Physics
Volume93
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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