Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, Ji Hyun Kim, L. A. Boatner

Research output: Contribution to journalArticle

877 Citations (Scopus)

Abstract

An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

Original languageEnglish
Pages (from-to)1-13
Number of pages13
JournalJournal of Applied Physics
Volume93
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes

Fingerprint

ferromagnetic materials
ferromagnetism
spacing
broadband
oxides
room temperature
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Pearton, S. J., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Norton, D. P., Theodoropoulou, N., ... Boatner, L. A. (2003). Wide band gap ferromagnetic semiconductors and oxides. Journal of Applied Physics, 93(1), 1-13. https://doi.org/10.1063/1.1517164

Wide band gap ferromagnetic semiconductors and oxides. / Pearton, S. J.; Abernathy, C. R.; Overberg, M. E.; Thaler, G. T.; Norton, D. P.; Theodoropoulou, N.; Hebard, A. F.; Park, Y. D.; Ren, F.; Kim, Ji Hyun; Boatner, L. A.

In: Journal of Applied Physics, Vol. 93, No. 1, 01.01.2003, p. 1-13.

Research output: Contribution to journalArticle

Pearton, SJ, Abernathy, CR, Overberg, ME, Thaler, GT, Norton, DP, Theodoropoulou, N, Hebard, AF, Park, YD, Ren, F, Kim, JH & Boatner, LA 2003, 'Wide band gap ferromagnetic semiconductors and oxides', Journal of Applied Physics, vol. 93, no. 1, pp. 1-13. https://doi.org/10.1063/1.1517164
Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Norton DP, Theodoropoulou N et al. Wide band gap ferromagnetic semiconductors and oxides. Journal of Applied Physics. 2003 Jan 1;93(1):1-13. https://doi.org/10.1063/1.1517164
Pearton, S. J. ; Abernathy, C. R. ; Overberg, M. E. ; Thaler, G. T. ; Norton, D. P. ; Theodoropoulou, N. ; Hebard, A. F. ; Park, Y. D. ; Ren, F. ; Kim, Ji Hyun ; Boatner, L. A. / Wide band gap ferromagnetic semiconductors and oxides. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 1. pp. 1-13.
@article{d046794107d64f189f9a3500407fdfdc,
title = "Wide band gap ferromagnetic semiconductors and oxides",
abstract = "An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.",
author = "Pearton, {S. J.} and Abernathy, {C. R.} and Overberg, {M. E.} and Thaler, {G. T.} and Norton, {D. P.} and N. Theodoropoulou and Hebard, {A. F.} and Park, {Y. D.} and F. Ren and Kim, {Ji Hyun} and Boatner, {L. A.}",
year = "2003",
month = "1",
day = "1",
doi = "10.1063/1.1517164",
language = "English",
volume = "93",
pages = "1--13",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Wide band gap ferromagnetic semiconductors and oxides

AU - Pearton, S. J.

AU - Abernathy, C. R.

AU - Overberg, M. E.

AU - Thaler, G. T.

AU - Norton, D. P.

AU - Theodoropoulou, N.

AU - Hebard, A. F.

AU - Park, Y. D.

AU - Ren, F.

AU - Kim, Ji Hyun

AU - Boatner, L. A.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

AB - An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

UR - http://www.scopus.com/inward/record.url?scp=0037258011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037258011&partnerID=8YFLogxK

U2 - 10.1063/1.1517164

DO - 10.1063/1.1517164

M3 - Article

AN - SCOPUS:0037258011

VL - 93

SP - 1

EP - 13

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

ER -