Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, Ji Hyun Kim, L. A. Boatner

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Abstract

An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

Original languageEnglish
Pages (from-to)1-13
Number of pages13
JournalJournal of Applied Physics
Volume93
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Pearton, S. J., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Norton, D. P., Theodoropoulou, N., ... Boatner, L. A. (2003). Wide band gap ferromagnetic semiconductors and oxides. Journal of Applied Physics, 93(1), 1-13. https://doi.org/10.1063/1.1517164