Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton; C. R. Abernathy; M. E. Overberg; G. T. Thaler; D. P. Norton; N. Theodoropoulou; A. F. Hebard; Y. D. Park; F. Ren; J. Kim; L. A. Boatner

doi:10.1063/1.1517164

Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, L. A. Boatner

Research output: Contribution to journal › Review article › peer-review

940 Citations (Scopus)

Abstract

An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

Original language	English
Pages (from-to)	1-13
Number of pages	13
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1517164
Publication status	Published - 2003 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1517164

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title = "Wide band gap ferromagnetic semiconductors and oxides",

abstract = "An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.",

author = "Pearton, {S. J.} and Abernathy, {C. R.} and Overberg, {M. E.} and Thaler, {G. T.} and Norton, {D. P.} and N. Theodoropoulou and Hebard, {A. F.} and Park, {Y. D.} and F. Ren and J. Kim and Boatner, {L. A.}",

note = "Funding Information: R. L. J and A. K. gratefully acknowledge financial support provided by NIH grants",

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doi = "10.1063/1.1517164",

language = "English",

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TY - JOUR

T1 - Wide band gap ferromagnetic semiconductors and oxides

AU - Pearton, S. J.

AU - Abernathy, C. R.

AU - Overberg, M. E.

AU - Thaler, G. T.

AU - Norton, D. P.

AU - Theodoropoulou, N.

AU - Hebard, A. F.

AU - Park, Y. D.

AU - Ren, F.

AU - Kim, J.

AU - Boatner, L. A.

N1 - Funding Information: R. L. J and A. K. gratefully acknowledge financial support provided by NIH grants

PY - 2003/1/1

Y1 - 2003/1/1

N2 - An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

AB - An analysis of wide band gap ferromagnetic semiconductors and oxides is presented. The introduction of Mn into GaN, GaP, ZnO and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. Growth of these ferromagnetic materials by thin film techniques provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is found to depend on a number of factors, including Mn-Mn spacing, carrier density, and carrier type.

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U2 - 10.1063/1.1517164

DO - 10.1063/1.1517164

M3 - Review article

AN - SCOPUS:0037258011

SN - 0021-8979

VL - 93

SP - 1

EP - 13

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Wide band gap ferromagnetic semiconductors and oxides

Abstract

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