Wideband harmonic-tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X-band

Seungwon Park, Sanggeun Jeon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A wideband power amplifier (PA) with high output power and efficiency over the entire X-band is implemented in a 0.11 μm CMOS technology. To achieve high efficiency in the wideband, a new harmonic-tuned technique is proposed for the output matching network of the PA, while no radio frequency (RF) choke is used for DC bias. Measurement results show that the output power and power-added efficiency (PAE) are no less than 19.5 dBm and 22.6%, respectively, over the entire X-band. The peak PAE is 28.9% with an output power of 20.3 dBm at 9 GHz.

Original languageEnglish
Pages (from-to)703-705
Number of pages3
JournalElectronics Letters
Volume51
Issue number9
DOIs
Publication statusPublished - 2015 Apr 30

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Power amplifiers
Broadband amplifiers
Electric inductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wideband harmonic-tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X-band. / Park, Seungwon; Jeon, Sanggeun.

In: Electronics Letters, Vol. 51, No. 9, 30.04.2015, p. 703-705.

Research output: Contribution to journalArticle

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