Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices?

Jihyun Kim, F. Ren, S. J. Pearton

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

There is currently great interest in ultra-wide bandgap semiconductors for their applicability in power switching electronics with improved efficiency compared to current technologies and also to solar-blind UV detection. One of the most promising materials is Ga2O3, available in large area bulk crystals and as exfoliated nano-layers (nanobelts, nanomembranes, and nanosheets). One aspect of this material that has not been widely recognized is the sensitivity of its surface to environment. The goal of this brief focus article is to provide some insight into the mechanisms and defects that underlie this effect and explain inconsistencies in the literature.

Original languageEnglish
Pages (from-to)1251-1255
Number of pages5
JournalNanoscale Horizons
Volume4
Issue number6
DOIs
Publication statusPublished - 2019 Nov

Fingerprint

Photonic devices
Gallium
Nanobelts
Oxides
Nanosheets
Energy gap
Electronic equipment
Semiconductor materials
Defects
Crystals
gallium oxide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices? / Kim, Jihyun; Ren, F.; Pearton, S. J.

In: Nanoscale Horizons, Vol. 4, No. 6, 11.2019, p. 1251-1255.

Research output: Contribution to journalArticle

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