Work function increase of Al-doped ZnO thin films by B+ ion implantation

Sang Jin Hong, Gi Seok Heo, Jong Woon Park, In-Hwan Lee, Bum Ho Choi, Jong Ho Lee, Se Yeon Park, Dong Chan Shin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The work function of an Al-doped ZnO (AZO) thin film can be increased via B + ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 × 10 16 cm -2 and ion energy of 5 keV. The resistance of the B + implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B + ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

Original languageEnglish
Pages (from-to)4077-4080
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume7
Issue number11
DOIs
Publication statusPublished - 2007 Nov 1
Externally publishedYes

Keywords

  • Al-Doped ZnO
  • Implantation
  • TCO
  • Work Function

ASJC Scopus subject areas

  • Medicine(all)

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  • Cite this

    Hong, S. J., Heo, G. S., Park, J. W., Lee, I-H., Choi, B. H., Lee, J. H., Park, S. Y., & Shin, D. C. (2007). Work function increase of Al-doped ZnO thin films by B+ ion implantation. Journal of Nanoscience and Nanotechnology, 7(11), 4077-4080. https://doi.org/10.1166/jnn.2007.090