X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components

Jae Sung Rieh; Liang Hung Lu; Linda P.B. Katehi; Pallab Bhattacharya; Edward T. Croke; George E. Ponchak; Samuel A. Alterovitz

doi:10.1109/22.668683

X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components

Jae Sung Rieh, Liang Hung Lu, Linda P.B. Katehi, Pallab Bhattacharya, Edward T. Croke, George E. Ponchak, Samuel A. Alterovitz

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm² emitter-size Si/SiGe HBT exhibited a de-current gain β of 10⁹, and f_T and f_max of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.

Original language	English
Pages (from-to)	685-694
Number of pages	10
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	46
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/22.668683
Publication status	Published - 1998
Externally published	Yes

Keywords

Amplifier
HBT
MMIC
Micromachining
Resonance frequency
Sige

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/22.668683

Cite this

X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components. / Rieh, Jae Sung; Lu, Liang Hung; Katehi, Linda P.B.; Bhattacharya, Pallab; Croke, Edward T.; Ponchak, George E.; Alterovitz, Samuel A.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 5 PART 2, 1998, p. 685-694.

Research output: Contribution to journal › Article › peer-review

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title = "X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components",

abstract = "A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm2 emitter-size Si/SiGe HBT exhibited a de-current gain β of 109, and fT and fmax of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.",

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author = "Rieh, {Jae Sung} and Lu, {Liang Hung} and Katehi, {Linda P.B.} and Pallab Bhattacharya and Croke, {Edward T.} and Ponchak, {George E.} and Alterovitz, {Samuel A.}",

note = "Funding Information: Manuscript received December 31, 1997; revised February 11, 1998. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the Air Force Office of Scientific Research under Grant F49620-95-1-0013. J.-S. Rieh, L.-H. Lu, L. P. B. Katehi, and P. Bhattacharya are with the Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122 USA. E. T. Croke is with Hughes Research Laboratory, Malibu, CA 90265 USA. G. E. Ponchak and S. A. Alterovitz are with NASA Lewis Research Center, Cleveland, OH 44135 USA. Publisher Item Identifier S 0018-9480(98)03395-X. Funding Information: Dr. Bhattacharya is a member of the American Physical Society and Sigma Xi. He is an editor of the IEEE TRANSACTIONS ON ELECTRON DEVICES. He received the Parker Rhodes Scholarship from the University of Sheffield, the Research Excellence Award from the University of Michigan, and the Alexander von Humboldt Award.",

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AU - Bhattacharya, Pallab

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AU - Ponchak, George E.

AU - Alterovitz, Samuel A.

N1 - Funding Information: Manuscript received December 31, 1997; revised February 11, 1998. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the Air Force Office of Scientific Research under Grant F49620-95-1-0013. J.-S. Rieh, L.-H. Lu, L. P. B. Katehi, and P. Bhattacharya are with the Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122 USA. E. T. Croke is with Hughes Research Laboratory, Malibu, CA 90265 USA. G. E. Ponchak and S. A. Alterovitz are with NASA Lewis Research Center, Cleveland, OH 44135 USA. Publisher Item Identifier S 0018-9480(98)03395-X. Funding Information: Dr. Bhattacharya is a member of the American Physical Society and Sigma Xi. He is an editor of the IEEE TRANSACTIONS ON ELECTRON DEVICES. He received the Parker Rhodes Scholarship from the University of Sheffield, the Research Excellence Award from the University of Michigan, and the Alexander von Humboldt Award.

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N2 - A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm2 emitter-size Si/SiGe HBT exhibited a de-current gain β of 109, and fT and fmax of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.

AB - A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm2 emitter-size Si/SiGe HBT exhibited a de-current gain β of 109, and fT and fmax of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.

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ER -

X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components

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