X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components

Jae Sung Rieh; Liang Hung Lu; Linda P.B. Katehi; Pallab Bhattacharya; Edward T. Croke; George E. Ponchak; Samuel A. Alterovitz

doi:10.1109/22.668683

X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components

Jae Sung Rieh, Liang Hung Lu, Linda P.B. Katehi, Pallab Bhattacharya, Edward T. Croke, George E. Ponchak, Samuel A. Alterovitz

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm² emitter-size Si/SiGe HBT exhibited a de-current gain β of 10⁹, and f_T and f_max of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.

Original language	English
Pages (from-to)	685-694
Number of pages	10
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	46
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/22.668683
Publication status	Published - 1998
Externally published	Yes

Keywords

Amplifier
HBT
MMIC
Micromachining
Resonance frequency
Sige

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/22.668683

Fingerprint Dive into the research topics of 'X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components'. Together they form a unique fingerprint.

Cite this

X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components. / Rieh, Jae Sung; Lu, Liang Hung; Katehi, Linda P.B.; Bhattacharya, Pallab; Croke, Edward T.; Ponchak, George E.; Alterovitz, Samuel A.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 5 PART 2, 1998, p. 685-694.

Research output: Contribution to journal › Article › peer-review

@article{8a20cb5606874940a69886e84b6e146b,

title = "X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components",

abstract = "A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm2 emitter-size Si/SiGe HBT exhibited a de-current gain β of 109, and fT and fmax of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.",

keywords = "Amplifier, HBT, MMIC, Micromachining, Resonance frequency, Sige",

author = "Rieh, {Jae Sung} and Lu, {Liang Hung} and Katehi, {Linda P.B.} and Pallab Bhattacharya and Croke, {Edward T.} and Ponchak, {George E.} and Alterovitz, {Samuel A.}",

year = "1998",

doi = "10.1109/22.668683",

language = "English",

volume = "46",

pages = "685--694",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 2",

}

TY - JOUR

T1 - X- and ku-band amplifiers based on si/sige hbt's and micromachined lumped components

AU - Rieh, Jae Sung

AU - Lu, Liang Hung

AU - Katehi, Linda P.B.

AU - Bhattacharya, Pallab

AU - Croke, Edward T.

AU - Ponchak, George E.

AU - Alterovitz, Samuel A.

PY - 1998

Y1 - 1998

N2 - A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm2 emitter-size Si/SiGe HBT exhibited a de-current gain β of 109, and fT and fmax of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.

AB - A double mesa-structure Si/SiGe heterqjunction bipolar transistor (HBT) and novel niicrornachined lumped passive components have been developed and successfully applied to the fabrication of X- and Ku-band monolithic amplifiers. The fabricated 5 × 5 μm2 emitter-size Si/SiGe HBT exhibited a de-current gain β of 109, and fT and fmax of 28 and 52 GHz, respectively. Micromachined spiral inductors demonstrated resonance frequency of 20 GHz up to 4 nH, which is higher than that of conventional spiral inductors by a factor of two. Single-, dual-, and three-stage X-band amplifiers have been designed, based on the extracted active- and passive-device model parameters. A single-stage amplifier exhibited a peak gain of 4.0 dB at 10.0 GHz, while dual- and three-stage versions showed peak gains of 5.7 dB at 10.0 GHz and 12.6 dB at 11.1 GHz, respectively. A Ku-band single-stage amplifier has also been designed and fabricated, showing a peak gain of 1.4 dB at 16.6 GHz. Matching circuits for all these amplifiers were implemented by lumped components, leading to a much smaller chip size compared to those employing distributed components as matching elements.

KW - Amplifier

KW - HBT

KW - MMIC

KW - Micromachining

KW - Resonance frequency

KW - Sige

UR - http://www.scopus.com/inward/record.url?scp=0032074136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032074136&partnerID=8YFLogxK

U2 - 10.1109/22.668683

DO - 10.1109/22.668683

M3 - Article

AN - SCOPUS:0032074136

VL - 46

SP - 685

EP - 694

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 5 PART 2

ER -