X-ray characterization of InxGa1-xAs/GaAs quantum wells

Jichai Jeong, T. E. Schlesinger, A. G. Milnes

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8 Citations (Scopus)


X-ray diffraction patterns have been measured for pseudomorphic InxGa1-xAs/GaAs quantum well (QW) structures of widths 183, 121 and 61 {right parenthesis, less than}, and composition x of about 0.28 grown by molecular beam epitaxy. The measured patterns show Pendellösung fringes due to the 513 {right parenthesis, less than} GaAs barriers. These Pendellösung fringes are modulated by a broad weak peak mostly coming from the 183 Å InxGa1-xAs well layer. The X-ray diffraction fringe modulating patterns between 32° and 33° are fairly symmetric for a non-interrupted growth procedure. The diffraction pattern for the same structures with interrupted growth is less symmetric, since there is further modulation by another weaker peak. This shows that the InxGa1-xAs well layers have less well controlled In composition if grown with interruption times of tens of seconds at each interface. The thickest InxGa1-xAs well layer exhibits the highest In composition. Layer thickness and In composition in thin layers (around 100 {right parenthesis, less than} in the thickness) can be estimated by X-ray modeling and good agreement obtained between the measured and the calculated X-ray diffraction patterns.

Original languageEnglish
Pages (from-to)265-275
Number of pages11
JournalJournal of Crystal Growth
Issue number2-3
Publication statusPublished - 1988 Feb

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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