X-ray characterization of InxGa1-xAs/GaAs quantum wells

Jichai Jeong, T. E. Schlesinger, A. G. Milnes

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

X-ray diffraction patterns have been measured for pseudomorphic InxGa1-xAs/GaAs quantum well (QW) structures of widths 183, 121 and 61 {right parenthesis, less than}, and composition x of about 0.28 grown by molecular beam epitaxy. The measured patterns show Pendellösung fringes due to the 513 {right parenthesis, less than} GaAs barriers. These Pendellösung fringes are modulated by a broad weak peak mostly coming from the 183 Å InxGa1-xAs well layer. The X-ray diffraction fringe modulating patterns between 32° and 33° are fairly symmetric for a non-interrupted growth procedure. The diffraction pattern for the same structures with interrupted growth is less symmetric, since there is further modulation by another weaker peak. This shows that the InxGa1-xAs well layers have less well controlled In composition if grown with interruption times of tens of seconds at each interface. The thickest InxGa1-xAs well layer exhibits the highest In composition. Layer thickness and In composition in thin layers (around 100 {right parenthesis, less than} in the thickness) can be estimated by X-ray modeling and good agreement obtained between the measured and the calculated X-ray diffraction patterns.

Original languageEnglish
Pages (from-to)265-275
Number of pages11
JournalJournal of Crystal Growth
Volume87
Issue number2-3
Publication statusPublished - 1988 Feb 1
Externally publishedYes

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Semiconductor quantum wells
quantum wells
Diffraction patterns
X rays
Chemical analysis
X ray diffraction
diffraction patterns
x rays
Molecular beam epitaxy
interruption
Modulation
molecular beam epitaxy
gallium arsenide
modulation
diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Jeong, J., Schlesinger, T. E., & Milnes, A. G. (1988). X-ray characterization of InxGa1-xAs/GaAs quantum wells. Journal of Crystal Growth, 87(2-3), 265-275.

X-ray characterization of InxGa1-xAs/GaAs quantum wells. / Jeong, Jichai; Schlesinger, T. E.; Milnes, A. G.

In: Journal of Crystal Growth, Vol. 87, No. 2-3, 01.02.1988, p. 265-275.

Research output: Contribution to journalArticle

Jeong, J, Schlesinger, TE & Milnes, AG 1988, 'X-ray characterization of InxGa1-xAs/GaAs quantum wells', Journal of Crystal Growth, vol. 87, no. 2-3, pp. 265-275.
Jeong J, Schlesinger TE, Milnes AG. X-ray characterization of InxGa1-xAs/GaAs quantum wells. Journal of Crystal Growth. 1988 Feb 1;87(2-3):265-275.
Jeong, Jichai ; Schlesinger, T. E. ; Milnes, A. G. / X-ray characterization of InxGa1-xAs/GaAs quantum wells. In: Journal of Crystal Growth. 1988 ; Vol. 87, No. 2-3. pp. 265-275.
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N2 - X-ray diffraction patterns have been measured for pseudomorphic InxGa1-xAs/GaAs quantum well (QW) structures of widths 183, 121 and 61 {right parenthesis, less than}, and composition x of about 0.28 grown by molecular beam epitaxy. The measured patterns show Pendellösung fringes due to the 513 {right parenthesis, less than} GaAs barriers. These Pendellösung fringes are modulated by a broad weak peak mostly coming from the 183 Å InxGa1-xAs well layer. The X-ray diffraction fringe modulating patterns between 32° and 33° are fairly symmetric for a non-interrupted growth procedure. The diffraction pattern for the same structures with interrupted growth is less symmetric, since there is further modulation by another weaker peak. This shows that the InxGa1-xAs well layers have less well controlled In composition if grown with interruption times of tens of seconds at each interface. The thickest InxGa1-xAs well layer exhibits the highest In composition. Layer thickness and In composition in thin layers (around 100 {right parenthesis, less than} in the thickness) can be estimated by X-ray modeling and good agreement obtained between the measured and the calculated X-ray diffraction patterns.

AB - X-ray diffraction patterns have been measured for pseudomorphic InxGa1-xAs/GaAs quantum well (QW) structures of widths 183, 121 and 61 {right parenthesis, less than}, and composition x of about 0.28 grown by molecular beam epitaxy. The measured patterns show Pendellösung fringes due to the 513 {right parenthesis, less than} GaAs barriers. These Pendellösung fringes are modulated by a broad weak peak mostly coming from the 183 Å InxGa1-xAs well layer. The X-ray diffraction fringe modulating patterns between 32° and 33° are fairly symmetric for a non-interrupted growth procedure. The diffraction pattern for the same structures with interrupted growth is less symmetric, since there is further modulation by another weaker peak. This shows that the InxGa1-xAs well layers have less well controlled In composition if grown with interruption times of tens of seconds at each interface. The thickest InxGa1-xAs well layer exhibits the highest In composition. Layer thickness and In composition in thin layers (around 100 {right parenthesis, less than} in the thickness) can be estimated by X-ray modeling and good agreement obtained between the measured and the calculated X-ray diffraction patterns.

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