X-ray response of Polycrystalline - CdZnTe

S. J. Park, Kihyun Kim, Y. J. Park, S. W. Yuk, I. H. Hwang, S. H. Tak, Y. H. Na, Y. Yi, S. U. Kim

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

X-ray response of Polycrystalline-CdZnTe deposited by thermal evaporation were measured by signal to noise(S/N) analysis. The CdZnTe material has optimal property adquem in solid state X-ray detector and many research presented on single crystal CdZnTe with small sized silicon readout device, but it would be difficult to apply CdTe or CdZnTe single crystal to large area-flat pannel detectors such as radiography and mammography. Alternatives of single crystal, we have grown high resistivity Polycrystalline CdZnTe (> 5 X10̂9 Ohm cm) thick films by thermal evaporation method on carbon substrate. A high signal-to-noise has a direct impact on the performance of CdZnTe X-ray detectors. Important image parameter such as dynamic range and detective quantum efficiency, rely on the signal and noise characteristics of the system. In this paper, the S/N of high resistivity Polycrystalline CdZnTe detector different detector thickness with different pixel size and applied bias voltage has been measured. The detector design is planar, 35mm × 15mm with different pixel electrode size and different detector thickness (up to 150 um). The electrical signal was amplified by a Burr-Brown ACF2101 low-noise current to voltage conversion amplifier. The increase of the S/N with bias voltage and detector thickness is due to the enhanced charge collection efficiency and energy absorption efficiency, respectively. At bias voltage 5 V, the 150 um thick CdZnTe detector with 100 um pixel size operate in the saturation region, at 65kVp with a tube current of 7.5 mA and an exposure time of 0.6 sec.

Original languageEnglish
Pages (from-to)4428-4432
Number of pages5
JournalIEEE Nuclear Science Symposium Conference Record
Volume7
Publication statusPublished - 2004 Dec 1
Event2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors - Rome, Italy
Duration: 2004 Oct 162004 Oct 22

Fingerprint

X-Rays
detectors
Noise
x rays
pixels
electric potential
Hot Temperature
single crystals
evaporation
CdZnTe
electrical resistivity
Silicon
Mammography
energy absorption
Radiography
radiography
low noise
Electrodes
thick films
dynamic range

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

Cite this

Park, S. J., Kim, K., Park, Y. J., Yuk, S. W., Hwang, I. H., Tak, S. H., ... Kim, S. U. (2004). X-ray response of Polycrystalline - CdZnTe. IEEE Nuclear Science Symposium Conference Record, 7, 4428-4432.

X-ray response of Polycrystalline - CdZnTe. / Park, S. J.; Kim, Kihyun; Park, Y. J.; Yuk, S. W.; Hwang, I. H.; Tak, S. H.; Na, Y. H.; Yi, Y.; Kim, S. U.

In: IEEE Nuclear Science Symposium Conference Record, Vol. 7, 01.12.2004, p. 4428-4432.

Research output: Contribution to journalConference article

Park, SJ, Kim, K, Park, YJ, Yuk, SW, Hwang, IH, Tak, SH, Na, YH, Yi, Y & Kim, SU 2004, 'X-ray response of Polycrystalline - CdZnTe', IEEE Nuclear Science Symposium Conference Record, vol. 7, pp. 4428-4432.
Park SJ, Kim K, Park YJ, Yuk SW, Hwang IH, Tak SH et al. X-ray response of Polycrystalline - CdZnTe. IEEE Nuclear Science Symposium Conference Record. 2004 Dec 1;7:4428-4432.
Park, S. J. ; Kim, Kihyun ; Park, Y. J. ; Yuk, S. W. ; Hwang, I. H. ; Tak, S. H. ; Na, Y. H. ; Yi, Y. ; Kim, S. U. / X-ray response of Polycrystalline - CdZnTe. In: IEEE Nuclear Science Symposium Conference Record. 2004 ; Vol. 7. pp. 4428-4432.
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