Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices

Sang Ho Kim; Seong Wook Jeong; Dae Kue Hwang; Seong Ju Park; Tae Yeon Seong

doi:10.1149/1.1943548

Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices

Sang Ho Kim, Seong Wook Jeong, Dae Kue Hwang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We have investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, The Zn/Au contacts produce linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient. The samples annealed at 500°C yielded contact resistivity as low as 2.36 × 10^-5 Ω cm². However, annealing the samples at 600°C degraded their electrical characteristics with contact resistivity of 1.01 × 10 ^-2 Ω cm². Based on the X-ray diffraction and X-ray photoemission spectroscopy results, the possible formation and degradation mechanisms of the Zn/Au contacts are described and discussed.

Original language	English
Pages (from-to)	G198-G200
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	8
DOIs	https://doi.org/10.1149/1.1943548
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices",

abstract = "We have investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, The Zn/Au contacts produce linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient. The samples annealed at 500°C yielded contact resistivity as low as 2.36 × 10-5 Ω cm2. However, annealing the samples at 600°C degraded their electrical characteristics with contact resistivity of 1.01 × 10 -2 Ω cm2. Based on the X-ray diffraction and X-ray photoemission spectroscopy results, the possible formation and degradation mechanisms of the Zn/Au contacts are described and discussed.",

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T1 - Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices

AU - Kim, Sang Ho

AU - Jeong, Seong Wook

AU - Hwang, Dae Kue

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

N2 - We have investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, The Zn/Au contacts produce linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient. The samples annealed at 500°C yielded contact resistivity as low as 2.36 × 10-5 Ω cm2. However, annealing the samples at 600°C degraded their electrical characteristics with contact resistivity of 1.01 × 10 -2 Ω cm2. Based on the X-ray diffraction and X-ray photoemission spectroscopy results, the possible formation and degradation mechanisms of the Zn/Au contacts are described and discussed.

AB - We have investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, The Zn/Au contacts produce linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient. The samples annealed at 500°C yielded contact resistivity as low as 2.36 × 10-5 Ω cm2. However, annealing the samples at 600°C degraded their electrical characteristics with contact resistivity of 1.01 × 10 -2 Ω cm2. Based on the X-ray diffraction and X-ray photoemission spectroscopy results, the possible formation and degradation mechanisms of the Zn/Au contacts are described and discussed.

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JO - Electrochemical and Solid-State Letters

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ER -

Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices

Abstract

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