We have investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, The Zn/Au contacts produce linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient. The samples annealed at 500°C yielded contact resistivity as low as 2.36 × 10-5 Ω cm2. However, annealing the samples at 600°C degraded their electrical characteristics with contact resistivity of 1.01 × 10 -2 Ω cm2. Based on the X-ray diffraction and X-ray photoemission spectroscopy results, the possible formation and degradation mechanisms of the Zn/Au contacts are described and discussed.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering