Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices

Sang Ho Kim, Seong Wook Jeong, Dae Kue Hwang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We have investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, The Zn/Au contacts produce linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient. The samples annealed at 500°C yielded contact resistivity as low as 2.36 × 10-5 Ω cm2. However, annealing the samples at 600°C degraded their electrical characteristics with contact resistivity of 1.01 × 10 -2 Ω cm2. Based on the X-ray diffraction and X-ray photoemission spectroscopy results, the possible formation and degradation mechanisms of the Zn/Au contacts are described and discussed.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number8
DOIs
Publication statusPublished - 2005 Sep 14
Externally publishedYes

Fingerprint

Ohmic contacts
Epitaxial layers
Photoelectron spectroscopy
X ray spectroscopy
electric contacts
Nitrogen
Annealing
X ray diffraction
Degradation
Electric potential
Temperature
electrical resistivity
low resistance
x rays
photoelectric emission
degradation
nitrogen
annealing
electric potential
diffraction

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices. / Kim, Sang Ho; Jeong, Seong Wook; Hwang, Dae Kue; Park, Seong Ju; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 8, 14.09.2005.

Research output: Contribution to journalArticle

Kim, Sang Ho ; Jeong, Seong Wook ; Hwang, Dae Kue ; Park, Seong Ju ; Seong, Tae Yeon. / Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices. In: Electrochemical and Solid-State Letters. 2005 ; Vol. 8, No. 8.
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