ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications

Chul Ho Lee, Jinkyoung Yoo, Yong Joo Doh, Gyu Chul Yi

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.

Original languageEnglish
Article number043504
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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