ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications

Chul Ho Lee; Jinkyoung Yoo; Yong Joo Doh; Gyu Chul Yi

doi:10.1063/1.3075606

ZnO/ Mg_0.2 Zn_0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications

Chul Ho Lee, Jinkyoung Yoo, Yong Joo Doh, Gyu Chul Yi

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg_0.2 Zn_0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg_0.2 Zn_0.8 O shell layer are presumably responsible for the highly enhanced device performance.

Original language	English
Article number	043504
Journal	Applied Physics Letters
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.3075606
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3075606

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title = "ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications",

abstract = "We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.",

author = "Lee, {Chul Ho} and Jinkyoung Yoo and Doh, {Yong Joo} and Yi, {Gyu Chul}",

note = "Funding Information: This work was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF). Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

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AU - Lee, Chul Ho

AU - Yoo, Jinkyoung

AU - Doh, Yong Joo

AU - Yi, Gyu Chul

N1 - Funding Information: This work was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF). Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009

Y1 - 2009

N2 - We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.

AB - We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.

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