Abstract
We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.
| Original language | English |
|---|---|
| Article number | 043504 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Feb 9 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications. / Lee, Chul-Ho; Yoo, Jinkyoung; Doh, Yong Joo; Yi, Gyu Chul.
In: Applied Physics Letters, Vol. 94, No. 4, 043504, 09.02.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications
AU - Lee, Chul-Ho
AU - Yoo, Jinkyoung
AU - Doh, Yong Joo
AU - Yi, Gyu Chul
PY - 2009/2/9
Y1 - 2009/2/9
N2 - We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.
AB - We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.
UR - http://www.scopus.com/inward/record.url?scp=59349120063&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=59349120063&partnerID=8YFLogxK
U2 - 10.1063/1.3075606
DO - 10.1063/1.3075606
M3 - Article
AN - SCOPUS:59349120063
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 4
M1 - 043504
ER -