ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications

Chul-Ho Lee, Jinkyoung Yoo, Yong Joo Doh, Gyu Chul Yi

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26 Citations (Scopus)

Abstract

We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.

Original languageEnglish
Article number043504
JournalApplied Physics Letters
Volume94
Issue number4
DOIs
Publication statusPublished - 2009 Feb 9
Externally publishedYes

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nanorods
field effect transistors
electronics
passivity
hysteresis
fabrication

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures for high-performance electronic nanodevice applications. / Lee, Chul-Ho; Yoo, Jinkyoung; Doh, Yong Joo; Yi, Gyu Chul.

In: Applied Physics Letters, Vol. 94, No. 4, 043504, 09.02.2009.

Research output: Contribution to journalArticle

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