ZnO nanorods for electronic nanodevice applications

Gyu Chul Yi, Won Il Park, H. J. Kim, Chul-Ho Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages164-165
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Nanorods
MESFET devices
Logic gates
MOSFET devices
Diodes
Gates (transistor)
Electron mobility
Field effect transistors
Polymer films
Oxides
Etching
Fabrication
Thin films
Coatings

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Yi, G. C., Park, W. I., Kim, H. J., & Lee, C-H. (2006). ZnO nanorods for electronic nanodevice applications. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 164-165). [4388728] https://doi.org/10.1109/NMDC.2006.4388728

ZnO nanorods for electronic nanodevice applications. / Yi, Gyu Chul; Park, Won Il; Kim, H. J.; Lee, Chul-Ho.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 164-165 4388728.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yi, GC, Park, WI, Kim, HJ & Lee, C-H 2006, ZnO nanorods for electronic nanodevice applications. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388728, pp. 164-165, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388728
Yi GC, Park WI, Kim HJ, Lee C-H. ZnO nanorods for electronic nanodevice applications. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 164-165. 4388728 https://doi.org/10.1109/NMDC.2006.4388728
Yi, Gyu Chul ; Park, Won Il ; Kim, H. J. ; Lee, Chul-Ho. / ZnO nanorods for electronic nanodevice applications. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 164-165
@inproceedings{90ec1059e5de45a2800f0ca5c424b162,
title = "ZnO nanorods for electronic nanodevice applications",
abstract = "We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.",
keywords = "Field effect transistors (FETs), Logic gates, Nanodevice, Schottky didoes, ZnO nanorods",
author = "Yi, {Gyu Chul} and Park, {Won Il} and Kim, {H. J.} and Chul-Ho Lee",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/NMDC.2006.4388728",
language = "English",
isbn = "1424405408",
volume = "1",
pages = "164--165",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

}

TY - GEN

T1 - ZnO nanorods for electronic nanodevice applications

AU - Yi, Gyu Chul

AU - Park, Won Il

AU - Kim, H. J.

AU - Lee, Chul-Ho

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

AB - We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

KW - Field effect transistors (FETs)

KW - Logic gates

KW - Nanodevice

KW - Schottky didoes

KW - ZnO nanorods

UR - http://www.scopus.com/inward/record.url?scp=50249168220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249168220&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388728

DO - 10.1109/NMDC.2006.4388728

M3 - Conference contribution

AN - SCOPUS:50249168220

SN - 1424405408

SN - 9781424405404

VL - 1

SP - 164

EP - 165

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

ER -