ZnO nanorods for electronic nanodevice applications

Gyu Chul Yi, Won Il Park, H. J. Kim, C. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages164-165
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Field effect transistors (FETs)
  • Logic gates
  • Nanodevice
  • Schottky didoes
  • ZnO nanorods

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • Cite this

    Yi, G. C., Park, W. I., Kim, H. J., & Lee, C. H. (2006). ZnO nanorods for electronic nanodevice applications. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 164-165). [4388728] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388728