ZnO nanorods for electronic nanodevice applications

Won Il Park, J. Yoo, H. J. Kim, C. H. Lee, Gyu Chul Yi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. Electrical characteristics of several ZnO nanorod MOSFETs are compared in this proceeding. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process. These devices have been used for realization of ZnO nanorod logic gates.

Original languageEnglish
Title of host publicationZinc Oxide Materials and Devices
Publication statusPublished - 2006
Externally publishedYes
EventZinc Oxide Materials and Devices - San Jose, CA, United States
Duration: 2006 Jan 222006 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherZinc Oxide Materials and Devices
Country/TerritoryUnited States
CitySan Jose, CA


  • Logic circuits
  • Metal-oxide field effect transistor
  • Metal-semiconductor field effect transistor
  • Nanorods
  • Schottky diode
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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