ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3 gate oxides

Donghyuk Yeom, Jeongmin Kang, Myoungwon Lee, Jaewon Jang, Junggwon Yun, Dong Young Jeong, Changjoon Yoon, Jamin Koo, Sangsig Kim

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al2O3 tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (IDS-VGS) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

Original languageEnglish
Article number395204
JournalNanotechnology
Volume19
Issue number39
DOIs
Publication statusPublished - 2008 Oct 1

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al<sub>2</sub>O<sub>3</sub> gate oxides'. Together they form a unique fingerprint.

  • Cite this