ZnO nanowire-based nonvolatile memory devices with Al 20 3 layers as storage nodes

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Donghyuk Yeom, Dong Young Jeong, Byoungjun Park, Jucheol Park, Sangsig Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Top-gate ZnO nanowire field-effect transistors (FETs) with Al 20 3 gate dielectric layers as storage nodes were fabricated and their memory effects were characterized in this work. The Al 20 3 layers deposited on the ZnO nanowire channels were utilized not only as gate dielectric ones but also as charge trapping ones. For a representative top-gate ZnO nanowire FET, its l DS-V GS characteristics for the double sweep of the gate voltages exhibit the counterclockwise hysteresis and the threshold voltage shift. The gate voltage in the pulse form was applied for 1 s, and the threshold voltage shift of l ds-V GS characteristics was extended from 0.3 to 0.8 V compared with that for the double sweep. In this ZnO nanowire FET, negative charge carriers originated from the gate electrode are stored in the Al 20 3 layer for applied negative gate voltages, and they are extracted for applied positive gate voltages.

Original languageEnglish
Pages (from-to)4240-4243
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number7
DOIs
Publication statusPublished - 2009 Jul

Keywords

  • Al 0
  • Charge trapping
  • Field effect transistor
  • Memory device
  • Nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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