ZnO nanowire-based nonvolatile memory devices with Al 20 3 layers as storage nodes

Kihyun Keem, Jeongmin Kang, Changjoon Yoon, Donghyuk Yeom, Dong Young Jeong, Byoungjun Park, Jucheol Park, Sangsig Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Top-gate ZnO nanowire field-effect transistors (FETs) with Al 20 3 gate dielectric layers as storage nodes were fabricated and their memory effects were characterized in this work. The Al 20 3 layers deposited on the ZnO nanowire channels were utilized not only as gate dielectric ones but also as charge trapping ones. For a representative top-gate ZnO nanowire FET, its l DS-V GS characteristics for the double sweep of the gate voltages exhibit the counterclockwise hysteresis and the threshold voltage shift. The gate voltage in the pulse form was applied for 1 s, and the threshold voltage shift of l ds-V GS characteristics was extended from 0.3 to 0.8 V compared with that for the double sweep. In this ZnO nanowire FET, negative charge carriers originated from the gate electrode are stored in the Al 20 3 layer for applied negative gate voltages, and they are extracted for applied positive gate voltages.

Original languageEnglish
Pages (from-to)4240-4243
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number7
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

Nanowires
nanowires
Field effect transistors
Data storage equipment
Equipment and Supplies
Gate dielectrics
Electric potential
Threshold voltage
Charge trapping
field effect transistors
Charge carriers
electric potential
Hysteresis
threshold voltage
Electrodes
shift
charge carriers
trapping
hysteresis

Keywords

  • Al 0
  • Charge trapping
  • Field effect transistor
  • Memory device
  • Nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

ZnO nanowire-based nonvolatile memory devices with Al 20 3 layers as storage nodes. / Keem, Kihyun; Kang, Jeongmin; Yoon, Changjoon; Yeom, Donghyuk; Jeong, Dong Young; Park, Byoungjun; Park, Jucheol; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 9, No. 7, 01.07.2009, p. 4240-4243.

Research output: Contribution to journalArticle

Keem, Kihyun ; Kang, Jeongmin ; Yoon, Changjoon ; Yeom, Donghyuk ; Jeong, Dong Young ; Park, Byoungjun ; Park, Jucheol ; Kim, Sangsig. / ZnO nanowire-based nonvolatile memory devices with Al 20 3 layers as storage nodes. In: Journal of Nanoscience and Nanotechnology. 2009 ; Vol. 9, No. 7. pp. 4240-4243.
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