ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Joondong Kim, Ju Hyung Yun, Chang Hyun Kim, Yun Chang Park, Ju Yeon Woo, Jeunghee Park, Jung Ho Lee, Junsin Yi, Chang Soo Han

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

Original languageEnglish
Article number115205
JournalNanotechnology
Volume21
Issue number11
DOIs
Publication statusPublished - 2010
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Kim, J., Yun, J. H., Kim, C. H., Park, Y. C., Woo, J. Y., Park, J., Lee, J. H., Yi, J., & Han, C. S. (2010). ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect. Nanotechnology, 21(11), [115205]. https://doi.org/10.1088/0957-4484/21/11/115205