ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity

Woong Kim; Kyo Seon Chu

doi:10.1002/pssa.200824338

ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity

Woong Kim, Kyo Seon Chu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

53 Citations (Scopus)

Abstract

We demonstrate that drain-source (V _ds) and gate-source voltages (V _gs) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V _gs is positioned at the "bottom" of the subthreshold swing region.

Original language	English
Pages (from-to)	179-182
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	206
Issue number	1
DOIs	https://doi.org/10.1002/pssa.200824338
Publication status	Published - 2009 Jan 1

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1002/pssa.200824338

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Kim, W., & Chu, K. S. (2009). ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity. Physica Status Solidi (A) Applications and Materials Science, 206(1), 179-182. https://doi.org/10.1002/pssa.200824338

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