Abstract
We demonstrate that drain-source (V ds) and gate-source voltages (V gs) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V gs is positioned at the "bottom" of the subthreshold swing region.
| Original language | English |
|---|---|
| Pages (from-to) | 179-182 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 206 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity. / Kim, Woong; Chu, Kyo Seon.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 206, No. 1, 01.01.2009, p. 179-182.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity
AU - Kim, Woong
AU - Chu, Kyo Seon
PY - 2009/1/1
Y1 - 2009/1/1
N2 - We demonstrate that drain-source (V ds) and gate-source voltages (V gs) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V gs is positioned at the "bottom" of the subthreshold swing region.
AB - We demonstrate that drain-source (V ds) and gate-source voltages (V gs) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V gs is positioned at the "bottom" of the subthreshold swing region.
UR - http://www.scopus.com/inward/record.url?scp=58449129794&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=58449129794&partnerID=8YFLogxK
U2 - 10.1002/pssa.200824338
DO - 10.1002/pssa.200824338
M3 - Article
AN - SCOPUS:58449129794
VL - 206
SP - 179
EP - 182
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 1
ER -