ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity

Woong Kim, Kyo Seon Chu

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We demonstrate that drain-source (V ds) and gate-source voltages (V gs) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V gs is positioned at the "bottom" of the subthreshold swing region.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume206
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

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Field effect transistors
Photodetectors
Nanowires
Zinc Oxide
photometers
nanowires
field effect transistors
Zinc oxide
zinc oxides
optimization
sensitivity
Electric potential
electric potential
Detectors
sensors
detectors
Sensors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity. / Kim, Woong; Chu, Kyo Seon.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 206, No. 1, 01.01.2009, p. 179-182.

Research output: Contribution to journalArticle

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