ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity

Woong Kim, Kyo Seon Chu

Research output: Contribution to journalArticle

51 Citations (Scopus)


We demonstrate that drain-source (V ds) and gate-source voltages (V gs) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V gs is positioned at the "bottom" of the subthreshold swing region.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
Publication statusPublished - 2009 Jan 1


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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