Zno nanowire field-effect transistors with floating gate nodes of au nanoparticles

Donghyuk Yeom, Jeongmin Kang, Changjoon Yoon, Byoungjun Park, Dong Young Jeong, Eul Kwan Koh, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The memory characteristics of top-gate single ZnO nanowire-based field-effect transistors (FETs) with floating gate nodes consisting of Au nanoparticles on top of the nanowire channels were investigated in this study. Au nanoparticles, synthesized by a thermal deposition of Au thin film and by a subsequent thermal annealing procedure, were embedded in between A1203 tunneling and control gate layers deposited on ZnO nanowire channels. For a representative single ZnO nanowire-based FET with floating gate nodes consisting of Au nanoparticles embedded between Al203 layers, its drain current versus gate voltage (I0s-V0s) characteristics for a double sweep in the gate voltage range from -4 to 4 V exhibit a clockwise hysteresis loop with a threshold voltage shift of M/h = 1.6 V, resulting from the tunneling of the charge carriers from the ZnO nanowire channel into the Au nanoparticles. In addition, the charge storage characteristic of threshold voltage shift with the elapsed time observed in this FET is also discussed in this paper.

Original languageEnglish
Pages (from-to)3256-3260
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number5
DOIs
Publication statusPublished - 2009 May 1

Keywords

  • Au
  • FET.
  • Memory
  • Nanoparticles
  • Nanowires
  • ZnO

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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