ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application

Myeongwon Lee, Youngin Jeon, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this work, a single ZnO nanowire field-effect transistor (NWFET) with discrete-trap storage nodes of Pt nanocrystals (NCs) embedded within Al 2O3, a high-κ tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non-volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16 V under the ±15 V gate-source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 105 for the on/off current ratio for read-out of storage data. Furthermore, memory features, such as programming efficiency and on-cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors.

Original languageEnglish
Pages (from-to)1912-1916
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Field effect transistors
Nanocrystals
Nanowires
nanocrystals
nanowires
plastics
field effect transistors
Plastics
Data storage equipment
Substrates
data storage
Hysteresis loops
programming
Computer programming
Threshold voltage
threshold voltage
charging
Transistors
transistors
hysteresis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{f709ff065b7e4fcb9bf29f89e0777029,
title = "ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application",
abstract = "In this work, a single ZnO nanowire field-effect transistor (NWFET) with discrete-trap storage nodes of Pt nanocrystals (NCs) embedded within Al 2O3, a high-κ tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non-volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16 V under the ±15 V gate-source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 105 for the on/off current ratio for read-out of storage data. Furthermore, memory features, such as programming efficiency and on-cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors.",
keywords = "flexible substrates, nanocrystals, nanowires, non-volatile memory, platinum, ZnO",
author = "Myeongwon Lee and Youngin Jeon and Sangsig Kim",
year = "2014",
month = "1",
day = "1",
doi = "10.1002/pssa.201330499",
language = "English",
volume = "211",
pages = "1912--1916",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "8",

}

TY - JOUR

T1 - ZnO nanowire field-effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non-volatile memory application

AU - Lee, Myeongwon

AU - Jeon, Youngin

AU - Kim, Sangsig

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this work, a single ZnO nanowire field-effect transistor (NWFET) with discrete-trap storage nodes of Pt nanocrystals (NCs) embedded within Al 2O3, a high-κ tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non-volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16 V under the ±15 V gate-source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 105 for the on/off current ratio for read-out of storage data. Furthermore, memory features, such as programming efficiency and on-cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors.

AB - In this work, a single ZnO nanowire field-effect transistor (NWFET) with discrete-trap storage nodes of Pt nanocrystals (NCs) embedded within Al 2O3, a high-κ tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non-volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16 V under the ±15 V gate-source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 105 for the on/off current ratio for read-out of storage data. Furthermore, memory features, such as programming efficiency and on-cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors.

KW - flexible substrates

KW - nanocrystals

KW - nanowires

KW - non-volatile memory

KW - platinum

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84905916601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905916601&partnerID=8YFLogxK

U2 - 10.1002/pssa.201330499

DO - 10.1002/pssa.201330499

M3 - Article

AN - SCOPUS:84905916601

VL - 211

SP - 1912

EP - 1916

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 8

ER -