ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices

Dae Hyun Kim, Han Kyeol Lee, Jin Young Na, Sun Kyung Kim, Young Zo Yoo, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2%, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 10<sup>21</sup> to 1.11 × 10<sup>22</sup> cm<sup>-3</sup> and the mobility increases from 8.14 to 17.4 cm<sup>2</sup>/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10<sup>-3</sup> Ω<sup>-1</sup>. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.

Original languageEnglish
Pages (from-to)635-641
Number of pages7
JournalSuperlattices and Microstructures
Volume83
DOIs
Publication statusPublished - 2015 Jul 1

Fingerprint

Photonic devices
Multilayer films
Tin oxides
indium oxides
Indium
tin oxides
Oxide films
photonics
Electrodes
electrodes
transmittance
oxide films
Sheet resistance
Bending tests
S matrix theory
indium tin oxide
figure of merit
matrix methods
Carrier concentration
flexibility

Keywords

  • Ag
  • ITO
  • Multilayer
  • Transparent conducting electrode
  • ZTO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices. / Kim, Dae Hyun; Lee, Han Kyeol; Na, Jin Young; Kim, Sun Kyung; Yoo, Young Zo; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 83, 01.07.2015, p. 635-641.

Research output: Contribution to journalArticle

Kim, Dae Hyun ; Lee, Han Kyeol ; Na, Jin Young ; Kim, Sun Kyung ; Yoo, Young Zo ; Seong, Tae Yeon. / ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices. In: Superlattices and Microstructures. 2015 ; Vol. 83. pp. 635-641.
@article{b2e17bc97ce84a0aa4e72f7b4f944bfc,
title = "ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices",
abstract = "To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2{\%}, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 1021 to 1.11 × 1022 cm-3 and the mobility increases from 8.14 to 17.4 cm2/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10-3 Ω-1. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.",
keywords = "Ag, ITO, Multilayer, Transparent conducting electrode, ZTO",
author = "Kim, {Dae Hyun} and Lee, {Han Kyeol} and Na, {Jin Young} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Seong, {Tae Yeon}",
year = "2015",
month = "7",
day = "1",
doi = "10.1016/j.spmi.2015.04.002",
language = "English",
volume = "83",
pages = "635--641",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices

AU - Kim, Dae Hyun

AU - Lee, Han Kyeol

AU - Na, Jin Young

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Seong, Tae Yeon

PY - 2015/7/1

Y1 - 2015/7/1

N2 - To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2%, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 1021 to 1.11 × 1022 cm-3 and the mobility increases from 8.14 to 17.4 cm2/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10-3 Ω-1. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.

AB - To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2%, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 1021 to 1.11 × 1022 cm-3 and the mobility increases from 8.14 to 17.4 cm2/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10-3 Ω-1. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.

KW - Ag

KW - ITO

KW - Multilayer

KW - Transparent conducting electrode

KW - ZTO

UR - http://www.scopus.com/inward/record.url?scp=84928812036&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928812036&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2015.04.002

DO - 10.1016/j.spmi.2015.04.002

M3 - Article

VL - 83

SP - 635

EP - 641

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -