ZrO2 dielectric-based low-voltage organic thin-film inverters

Jeong Do Oh, Hoon Seok Seo, Eun Sol Shin, Dae Kyu Kim, Young Geun Ha, Jong-Ho Choi

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Abstract

In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10- perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.

Original languageEnglish
Article number063304
JournalApplied Physics Letters
Volume103
Issue number6
DOIs
Publication statusPublished - 2013 Aug 5

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Oh, J. D., Seo, H. S., Shin, E. S., Kim, D. K., Ha, Y. G., & Choi, J-H. (2013). ZrO2 dielectric-based low-voltage organic thin-film inverters. Applied Physics Letters, 103(6), [063304]. https://doi.org/10.1063/1.4818269